Vapor Phase Epitaxial Growth of ZnTe Films Using Metallic Sources
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概要
- 論文の詳細を見る
Undoped ZnTe films with very low resisitivity were grown by vapor phase epitaxy (VPE) with elemental Zn and Te as source materials. The source vapors were transported separately to the vicinity of the substrates, kept at 450-560℃, by flow through a thin quartz tube. The growth rate showed two activation energies (45 kcal/mol and 15 kcal/mol) according to the growth temperature. The epitaxial growth was confirmed by using high energy electorn diffraction (RHEED) measurements. Hall effect measurements showed p-type conductivity. Conductive films were obtained when the flow rates of Zn and Te were almost equal and the substrate temperature was above 500℃.
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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SEKINE Masami
Department of Bioproduction Science, Faculty of Bioresources and Environmental Sciences, Ishikawa Pr
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Sekine Masami
Department Of Electrical And Electronics Engineering Faculty Of Engineering Ibaraki University
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Muranoi Tetsuo
Department Of Electrical And Electronics Engineering Faculty Of Engineering Ibaraki University
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Muranoi Tetsuo
Department Of Electrical And Electronic Engineering Faculty Of Engineering Ibaraki University
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Sekine Masami
Department Of Bioproduction Science Ishikawa Prefectural University
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