Atomic and Electronic States of Ag in Sputter-Deposited Ge-Ag Alloys Studied by Photoemission Spectroscopy and Cluster Calculation

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The ultraviolet photoemission spectra of the Ag-4d band in sputter-deposited Ge_<100-x>Ag_x (0 ≦ x ≦ 39.6) alloys change characteristically with Ag concentration. For 0 ≦ x ≦ 5.6, where X-ray diffraction shows that Ag atoms are dissolved in an amorphous Ge matrix, a single narrow Ag-4d peak is observed between Ge-4s and -4p bands. For 5.6 < x ≦ 16.9, where aggregation of Ag atoms is suggested to occur, the Ag-4d peak undergoes broadening with a few fine structures. The spectrum at the Fermi edge also manifests a semiconductorlike to metallic profile change with increasing Ag concentration. Electronic structure calculations by the DV-Xα method on Ge-Ag alloy clusters with a diamond structure provide density-of-states curves which are consistent with several features of these UPS spectra.
社団法人応用物理学会の論文
1998-09-15