Electronic Structure and Electrical Conductivity of Amorphous Ni-Si Alloy Films
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概要
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The Ni.Si)gg . system forms a homogeneous anaorphous phase over wide ranges of compost-tton (O fi x fi 34 and 63 .< x fi 73) when the alloy is deposited on a substrate by sputteringat arnbient ternperature. The electrical condtrctivity of' the arnorphotns alloy changes character-istically wuth Xi concentratuon f'rorn a sermiconductor-like temperature dependence to a metallicone, the transition taking place between 10.4 and 16.6'X INN. UPS valence band spectra shoxvthat the density of states at the Fermi level is taaininaal below alcout 7% Ni, but emerges abrtuptlyabove this concentration. The relationship between the electrical transport properties and theelectronic structure of the amorphous alloys is discussed in three characteristic regions of the Niconcentration.
- 社団法人日本物理学会の論文
- 1997-07-15
著者
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Yamada Masaaki
Department Of Applied Biological Chemistry Faculty Of Agriculture Niigata University
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Tanaka Kazuhide
Department Metallurgical Engineering Nagoya Institute Of Technology
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Isobe Atsuo
Department of Materials Science and Engineering,Nagoya Institute of Technology
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Isobe Atsuo
Department Of Materials Science And Engineering Nagoya Institute Of Technology
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