Influence of Interfacial Oxide on Self-Alignment Silicide Process
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-11-15
著者
-
Huang J‐y
National Tsing‐hua Univ. Hsinchu Twn
-
Huang Jen-yun
Department Of Materials Science And Engineering National Tsing-hua University
-
WU Shinn-Tyan
Department of Materials Science and Engineering, National Tsing-Hua University
-
Wu S‐t
National Tsing‐hua Univ. Hsinchu Twn
-
Wu Shinn-tyan
Department Of Material Science And Engineering National Tsing-hua University
関連論文
- Epitaxial Growth of C54 TiSi_2 on Si (001) as Revealed by High Resolution Transmission Electron Microscope
- Epitaxial Growth of TiN(100) on Si(100) by Reactive Magnetron Sputtering at Low Temperature
- Epitaxial Growth of C54 TiSi_2 on Si(001) by Self-Aligned Process
- Dual-Layer Structure of Ti on Al_2O_3(0001) Grown Epitaxially at Room Temperature
- Heteroepitaxial TiN of Very Low Mosaic Spread on Al_2O_3
- Epitaxial Growth of TiN on Al_2O_3 at Cryogenic Temperature
- Epitaxial Growth of TiSi_2 (C49) on (001)Si by Rapid Thermal Annealing
- Epitaxial Growth of TiC (002) on Si (001) by Reactive Magnetron Sputtering at Low Temperatures
- Influence of Interfacial Oxide on Self-Alignment Silicide Process
- Heteroepitaxial TiN of Very Low Mosaic Spread on Al2O3
- Epitaxial Growth of TiN(100) on Si(100) by Reactive Magnetron Sputtering at Low Temperature
- Dual-Layer Structure of Ti on Al2O3(0 0 0 1) Grown Epitaxially at Room Temperature
- Epitaxial Growth of TiN on Al2O3 at Cryogenic Temperature
- Influence of Interfacial Oxide on Self-Alignment Silicide Process
- Epitaxial Growth of TiC (002) on Si (001) by Reactive Magnetron Sputtering at Low Temperatures