Influence of Interfacial Oxide on Self-Alignment Silicide Process

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概要

• 論文の詳細を見る

• The microstructure of titanium silicide is affected by the presence of an interfacial oxide (SiOx) layer on silicon prior to sputtering deposition of titanium film. The microstructure is investigated by transmission electron microscopic (TEM) and scanning electron microscopic (SEM), the texture is determined from X-ray pole figures and resistivity is determined by four-point probe measurement. It is discovered that the silicide film becomes discontinuous if the oxide layer (SiOx) is thicker than 3.4 nm and the film is highly resistive. If the oxide layer is thinner than 1.7 nm, the resistivity is not affected because the interfacial oxygen atoms are presumably snowplowed to the surface. The grains of discontinuous silicide exhibit a weak epitaxial relationship with Si(001).

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-11-15

著者

• Huang Jen-yun

  Department Of Materials Science And Engineering National Tsing-hua University

• Wu Shinn-tyan

  Department Of Material Science And Engineering National Tsing-hua University

• Huang Jen-Yun

  Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, Republic of China

• Wu Shinn-Tyan

  Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, Republic of China

関連論文

• Epitaxial Growth of C54 TiSi_2 on Si (001) as Revealed by High Resolution Transmission Electron Microscope
• Epitaxial Growth of C54 TiSi_2 on Si(001) by Self-Aligned Process
• Dual-Layer Structure of Ti on Al_2O_3(0001) Grown Epitaxially at Room Temperature
• Epitaxial Growth of TiN on Al_2O_3 at Cryogenic Temperature
• Epitaxial Growth of TiSi_2 (C49) on (001)Si by Rapid Thermal Annealing
• Epitaxial Growth of TiC (002) on Si (001) by Reactive Magnetron Sputtering at Low Temperatures
• Influence of Interfacial Oxide on Self-Alignment Silicide Process
• Heteroepitaxial TiN of Very Low Mosaic Spread on Al2O3
• Epitaxial Growth of TiN(100) on Si(100) by Reactive Magnetron Sputtering at Low Temperature
• Dual-Layer Structure of Ti on Al2O3(0 0 0 1) Grown Epitaxially at Room Temperature
• Epitaxial Growth of TiN on Al2O3 at Cryogenic Temperature
• Influence of Interfacial Oxide on Self-Alignment Silicide Process
• Epitaxial Growth of TiC (002) on Si (001) by Reactive Magnetron Sputtering at Low Temperatures

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