Dual-Layer Structure of Ti on Al2O3(0 0 0 1) Grown Epitaxially at Room Temperature

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概要

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• The epitaxial growth of titanium on Al2O3(0 0 0 1) was achieved using magnetron sputtering with no substrate heating. The heating power supply was turned off during sputtering. The titanium layer was composed of two layers: Ti(1 0 $-1$ 0)/Ti(0 0 0 1)/Al2O3(0 0 0 1). Both X-ray and electron diffraction were applied to establish the epitaxial relationship: $\text{Ti(1 0 $-1$ 0)} \parallel \text{Ti(0 0 0 1)} \parallel \text{Al$_{2}$O$_{3}$(0 0 0 1)}$ $\text{Ti[0 0 0 1]} \parallel \text{Ti[1 0 $-1$ 0]} \parallel \text{Al$_{2}$O$_{3}$[1 1 $-2$ 0]}$

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-04-01

著者

• Wu Shinn-tyan

  Department Of Material Science And Engineering National Tsing-hua University

• Lin Yan-ru

  Department Of Materials Science And Engineering National Tsing-hua University

• Guo Xing-jian

  Department Of Chemistry National Tsing-hua University

• Chen Wei-chuan

  Department Of Chemical Engineering National Tsing Hua University

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• Epitaxial Growth of TiN on Al2O3 at Cryogenic Temperature
• Influence of Interfacial Oxide on Self-Alignment Silicide Process
• Epitaxial Growth of TiC (002) on Si (001) by Reactive Magnetron Sputtering at Low Temperatures

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