Epitaxial Growth of TiN on Al2O3 at Cryogenic Temperature
スポンサーリンク
概要
- 論文の詳細を見る
Epitaxial growth of a titanium nitride film on sapphire is achieved at the temperature of liquid nitrogen by means of reactive sputtering. The quality of epitaxy has been thoroughly studied by X-ray pole figure analysis. The full-width at half maximum (FWHM) from the X-ray rocking curve of 0.66° (2376 arcsec) is exceptionally low for the film grown at $-200$°C with a thickness of 50 nm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-02-15
著者
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Wu Shinn-tyan
Department Of Material Science And Engineering National Tsing-hua University
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Chen Wei-chuan
Department Of Chemical Engineering National Tsing Hua University
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Wu Shinn-Tyan
Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30043, Taiwan, R.O.C.
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Chen Wei-Chuan
Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30043, Taiwan, R.O.C.
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