Epitaxial Growth of TiC (002) on Si (001) by Reactive Magnetron Sputtering at Low Temperatures
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概要
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Epitaxial growth of TiC (100 nm) on Si (001) has been thoroughly investigated by X-ray pole figure analysis. Growth is achieved by reactive magnetron sputtering using metal target in a mixture of argon and acetylene. The acetylene partial pressure of is kept low at 2.6×10-5 Torr and the substrate temperature is higher than 500°C. This process is strikingly similar to the epitaxial growth of TiN, which suggests that the diffusion of metal atoms to kink sites is the dominant factor during epitaxial growth; lattice mismatch does not determine epitaxial growth.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1998-11-15
著者
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Wu Shinn-tyan
Department Of Material Science And Engineering National Tsing-hua University
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Sheu Wei-hwa
Department Of Materials Science And Engineering National Tsing-hua University
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Wu Shinn-Tyan
Department of Materials Science and Engineering, National Tsing-
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