Epitaxial Growth of TiN(100) on Si(100) by Reactive Magnetron Sputtering at Low Temperature
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概要
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Epitaxial growth of TiN (150 nm) on Si(100) has been thoroughly investigated by X-ray pole figure analysis. During reactive magnetron sputtering using metal targets, the epitaxial ordering of sputtered atoms starts between 300°C and 400°C. Below this range, the films have a fiber structure, with TiN(200) parallel to Si(100). Above this range, further in-plane order is developed such that Si(001)[110]//TiN(002)[110], which is clearly established by both X-ray and electron diffractions. This is the case despite the large lattice mismatch (Δa/a=24.6%), suggesting that lattice matching is not always a prerequisite for epitaxial growth.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-15
著者
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Wu Shinn-tyan
Department Of Material Science And Engineering National Tsing-hua University
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Sheu Wei-hwa
Department Of Materials Science And Engineering National Tsing-hua University
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Wu Shinn-Tyan
Department of Materials Science and Engineering, National Tsing-Hua University,
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Sheu Wei-Hwa
Department of Materials Science and Engineering, National Tsing-Hua University,
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