Fabrication and Evaluation of X-Ray Multilayer Mirrors Prepared by Laser-Induced Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
This study demonstrates a new preparation process for fabricating X-ray multilayer mirrors. Tungsten/carbon multilayer mirrors were prepared using laser-induced chemical vapor deposition (laser-CVD). The structure and properties of the mirror were examined using X-ray diffraction, synchrotron radiation and transmission electron microscopy (TEM) measurements. The reflectivity at a grazing angle of 14.5 degrees was observed to be 4.1% at a wavelength of 5 nm. The reflectivity was lower than the ideal reflectivity. The reduction in the reflectivity was caused by the lower-density film (tungsten layer), interface roughness and diffuse interfaces. Furthermore, after annealing at room temperature for two months, the increment of the period of this mirror was about 33%. This was due to the oxidation of tungsten films in W/C (tungsten/carbon multilayer mirror)
- 社団法人応用物理学会の論文
- 1992-04-15
著者
-
Seki S
Department Of Industrial Chemistry Graduate School Of Engineering Tokyo Institute Of Polytechnics
-
Seki Shoji
Yoshida Nano Mechanism Project J. R. D. C. Nikon Co.
-
NAGATA Hiroshi
Yoshida Nano-Mechanism Project, JRDC
-
SHIN-OGI Masataka
Yoshida Nano-Mechanism Project, JRDC, ERTO
-
ISHINO Yukinobu
Yoshida Nano-Mechanism Project, JRDC, ERTO
-
SUZUKI Yoshihiko
Yoshida Nano-Mechanism Project, JRDC, ERTO
-
Shin‐ogi M
Yoshida Nano-mechanism Project Jrdc Erto:(present Address) Seiko Instruments Inc.
-
Shin-ogi Masataka
Yoshida Nano-mechanism Project
-
Suzuki Yoshihiko
Yoshida Nano-mechanism Project
-
Suzuki Yoshihiko
Yoshida Nano-mechanism Project Jrdc Erto:(present Address) Nikon Corporation
-
Ishino Yukinobu
Yoshida Nano-mechanism Project Jrdc Erto:(present Address) Nikon Corporation
-
Nagata Hiroshi
Yoshida Nano Mechanism Project J. R. D. C. Nikon Co.:(present Address)nikon Co.
-
Nagata Hiroshi
Yoshida Nano-mechanism Project Jrdc Erto:(present Address) Nikon Corporation
関連論文
- Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
- Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
- Anger Electron Emission under Jon-Beam Shadowing Conditions
- Analysis of Misoriented Crystal Structure by Ion Channeling Observed Using Ion-Induced Secondary Electrons
- Planar Shadowing of Fast Ion Beams in Si and Ge Crystals Bombarded with 5 keV Ar^+
- High-Sensitivity Channeling Analysis of Lattice Disorder Near Surfaces Using Secondary Electrons Induced by Fast Ions
- Determination of the Crystallographic Polarity of Zincblende Structure by Using Ion-Induced Secondary Electrons
- Thermal Stability of Hg_Cd_xTe Crystals Covered with the Anodic Oxide Films
- Measurement of Soft X-Ray Absorption by Al, Cr, and Ni Using Synchrotron Radiation
- Indium-Tin-Oxide Thin Films Prepared by Dip Coating; Dependence of Resistivity on Film Thickness and Annealing Atmosphere : Surfaces, Interfaces, and Films
- TG-DTA-MS of Indium Acetate
- Fabrication and Evaluation of X-Ray Multilayer Mirrors Prepared by Laser-Induced Chemical Vapor Deposition
- Effect of Ar Pressure on the Sputter Deposition of Tungsten/Carbon Multilayers
- Nickel/Vanadium and Nickel/Titanium Multilayers for X-Ray Optics
- Photo-CVD Direct Patterning of Silicon Oxide Films by Optical Projection
- Tungsten-Carbon X-ray Multilayered Mirror Prepared by Photo-Chemical Vapor Deposition