Epitaxial Growth of TiO_2 Rutile Thin Films on Sapphire Substrates by a Reactive Ionized Cluster Beam Method

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-08-15

著者

• Takaoka G

  Kyoto Univ. Kyoto Jpn

• Takaoka Gikan

  Ion Beam Engineering Experimental Laboratory Kyoto University

• YAMADA Isao

  Ion Beam Engineering Experimental Laboratory, Kyoto University

• Fukushima K

  Institute Of Industrial Science University Of Tokyo

• FUKUSHIMA Kazunori

  Faculty of Engineering, Setsunan University

• Yamada Isao

  Ion Beam Engineering Experimental Laboratory Kyoto University

• Fukushima Kazunori

  Faculty Of Engineering Setsunan University

関連論文

• A Novel Nanoscale Metal Transistor Fabricated by Conventional Photolithography
• Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam Deposition
• Ionized Cluster Beams : Physics and Technology
• Fabrication of Silicon-Based Filiform-Necked Nanometric Oscillators
• Development of a Versatile Atomic Force Microscope within a Scanning Electron Microscope
• Effects on CO Oxidation Activity of Nano-Scale Au Islands and TiO_2 Support Prepared by the Ionized Cluster Beam Method
• Epitaxial Growth of TiO_2 Rutile Thin Films on Sapphire Substrates by a Reactive Ionized Cluster Beam Method
• Molecular Orientations of 1,4-dithioketo-3,6-diphenyl-pyrrolo-[3,4-c]-pyrroleon Crystalline Substrates
• Interaction of SF_6 Cluster Ion Beams with Si Surface : Surfaces, Interfaces, and Films
• Low-Temperature Oxidation of Silicon by O_2 Cluster Ion Beams
• A New Low-Temperature Oxidation Technique by Gas Cluster Ion Beams
• Production of Liquid Cluster Ions for Surface Treatment
• Development of Liquid Polyatomic Ion Beam System for Surface Modification : Instrumentation, Measurement, and Fabrication Technology
• Microhardness and Strain Depth Profiles in Nitrogen-Implanted TiO_2 Films
• Production of Liquid Cluster Ions for Surface Treatment

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