Interaction of SF_6 Cluster Ion Beams with Si Surface : Surfaces, Interfaces, and Films

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概要

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• The etching process of Si surfaces by irradiation of SF_6 cluster ions has been investigated using a quadrupole mass spectrometer (QMS) and a time-of-flight (TOF) method. The fluoride reaction is enhanced after impact of the cluster ions, and SiF_4 particles are evaporated from the surface. In contrast, after impact of SF_6 monomer ions on the Si substrate, physical sputtering occurs under a binary collision process, and the sputtered atoms are mainly Si atoms. In the reactive cluster ion beam process, high energy density in a local area on the surface results in a considerable increase in equivalent temperature inside the cluster, which is very effective for the enhancement of the chemical reaction. Thus, fluoride etching of Si at a high sputtering rate has been achieved by irradiation of SF_6 cluster ions but not SF_6 monomer ions.

• 社団法人応用物理学会の論文
• 2001-12-15

著者

• Takaoka Gikan

  Ion Beam Engineering Experimental Laboratory Kyoto University

• Matsuo Jiro

  Ion Beam Engineering Experimental Laboratory Kyoto University

• Seki Toshio

  Ion Beam Engineering Experimental Laboratory Kyoto University

• NAKAMURA Shigeru

  Ion Beam Engineering Experimental Laboratory, Kyoto University

• Nakamura Shigeru

  Ion Beam Engineering Experimental Laboratory Kyoto University

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• Near Edge X-Ray Absorption Fine Structure Study for Optimization of Hard Diamond-Like Carbon Film Formation with Ar Cluster Ion Beam
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