Microhardness and Strain Depth Profiles in Nitrogen-Implanted TiO_2 Films

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概要

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• Microhardness and strain depth profiles of N^+-implanted epitaxial rutile TiO_2 films on sapphire were studied. Implantation profiles were elucidated by sputtering beveled samples (inclination: 200-300 nm/10 mm), thereby facilitating depth profiling in which the analyzing probe was shifted to different depths on the sample surface. In a 180-keV-implanted sample, microhardness and interplanar spacing of the lattice increased with increasing depth, corresponding to the increase in defect density. Within the amorphized damage peak region, the microhardness was found to be lower than that in the crystalline region. In a multienergy-implanted sample (10,40,90 keV), a TiO_2 phase transformation from rutile to anatase was observed. We found that defect-induced and atomincorporation-induced stress and strain exerted a strong influence on the microhardness and microstructure of the films.

• 社団法人応用物理学会の論文
• 1996-11-15

著者

• YAMADA Isao

  Ion Beam Engineering Experimental Laboratory, Kyoto University

• FUKUSHIMA Kazunori

  Faculty of Engineering, Setsunan University

• Yamada Isao

  Ion Beam Engineering Experimental Laboratory Kyoto University

• Fukushima Kazunori

  Faculty Of Engineering Setsunan University

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• Effects on CO Oxidation Activity of Nano-Scale Au Islands and TiO_2 Support Prepared by the Ionized Cluster Beam Method
• Epitaxial Growth of TiO_2 Rutile Thin Films on Sapphire Substrates by a Reactive Ionized Cluster Beam Method
• Low-Temperature Oxidation of Silicon by O_2 Cluster Ion Beams
• A New Low-Temperature Oxidation Technique by Gas Cluster Ion Beams
• Microhardness and Strain Depth Profiles in Nitrogen-Implanted TiO_2 Films

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