Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1985-03-20

著者

• Inokawa Hiroshi

  Ion Beam Engineering Experimental Laboratory Kyoto University

• YAMADA Isao

  Ion Beam Engineering Experimental Laboratory, Kyoto University

• TAKAGI Toshinori

  Ion Beam Engineering Experimental Laboratory, Kyoto University

• Takagi Toshinori

  Ion Beam Engineering Experimental Laboratory Kyoto University

• Yamada Isao

  Ion Beam Engineering Experimental Laboratory Kyoto University

関連論文

• Observation of Initial Stage of Al Epitaxial Growth on Si(111) by Ionized Cluster Beam Deposition
• Ionized Cluster Beams : Physics and Technology
• Effects on CO Oxidation Activity of Nano-Scale Au Islands and TiO_2 Support Prepared by the Ionized Cluster Beam Method
• Epitaxial Growth of TiO_2 Rutile Thin Films on Sapphire Substrates by a Reactive Ionized Cluster Beam Method
• Low-Temperature Oxidation of Silicon by O_2 Cluster Ion Beams
• A New Low-Temperature Oxidation Technique by Gas Cluster Ion Beams
• Microhardness and Strain Depth Profiles in Nitrogen-Implanted TiO_2 Films

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