Investigation on Defects in Czochralski Silicon with High-Sensitive Laser/Microwave Photoconductance Technique
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概要
- 論文の詳細を見る
High sensitivity of a noncontact laser/microwave photoconductance (LM-PC) technique for defects in heat-treated Czochralski (CZ) silicon crystals was confirmed in comparison with other diagnostic techniques such as Fourier transform infrared spectroscopy (FT-IR) and deep-level transient spectroscopy (DLTS). The energy levels of recombination centers (E_T) in samples subjected to a three-step intrinsic gettering (IG) thermal process were obtained with LM-PC although no significant oxygen reduction in the samples was observed with FT-IR. The defect density detection limits of LM-PC and DLTS for samples after the three-step IG process are estimated to be ≤1×10^7 cm^<-3> and 〜1×10^<10> cm^<-3>, respectively. Moreover, the dependence of effective minority-carrier recombination lifetime on defect density was found to be influenced greatly by carbon concentration through the enhancement effect on oxygen precipitation.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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SHIMURA Fumio
Department of Food & Nutrition, Jumonji University
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Radzimski Zbigniew
Research Center For Integrated Systems Hiroshima University:(present Address)analytical Instrumentat
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Radzimski Zbigniew
Department Of Materials Science And Engineering North Carolina State University:(present Address) Se
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Shimura F
North Carolina State Univ. Nc Usa
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KATAYAMA Ken-ichi
Department of Materials Science and Engineering, North Carolina State University
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AGARWAL Aditya
Department of Materials Science and Engineering, North Carolina State University
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Katayama K
Department Of Materials Science And Engineering North Carolina State University : (present Address)
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Katayama Ken-ichi
Department Of Materials Science And Engineering North Carolina State University
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Agarwal Aditya
Department Of Materials Science And Engineering North Carolina State University
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