Effect of Ultraviolet Light Irradiation on Noncontact Laser Microwave Lifetime Measurement
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概要
- 論文の詳細を見る
An ultraviolet (UV) irradiation effect on minority-carrier recombination lifetime measured by a noncontact laser/microwave (LM) method is investigated for silicon wafers with native oxide. After UV irradiation, the surface recombination velocity greatly decreased resulting in the increase in the effective recombination lifetime (τ_<eff>). The effect disappears rapidly with time after the irradiation, and τ_<eff> recovers to the initial value after several minutes at room temperature. Since the UV irradiation process is noncontact and nondestructive, the irradiation is proposed to minimize the surface effect of sample, in turn, to obtain the bulk lifetime (τ_b) with a noncontact LM lifetime measurement method.
- 社団法人応用物理学会の論文
- 1991-11-15
著者
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SHIMURA Fumio
Department of Food & Nutrition, Jumonji University
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Iba Kunio
Department Of Materials Science And Engineering North Carolina State University
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Katayama Ken-ichi
Department Of Materials Science And Engineering North Carolina State University
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KIRINO Yoshio
Department of Materials Science and Engineering, North Carolina State University
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IBA Kunio
Department of Materials Science and Engineering, North Carolina State University
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