Influence of Crystal Thermal History on Surface Recombination Lifetime at Elevated Temperatures in Magnetic-Field-Applied Czochralski Silicon
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概要
- 論文の詳細を見る
Recombination lifetime for wafers prepared from two magnetic-field-applied Czochralski (MCZ) silicon crystals with a different body length was analyzed using a laser/microwave photoconductance (LM-PC) technique with an algorithm to separate the surface and bulk components. It has been shown that the surface lifetime dominantly contributes to the dependence of the effective lifetime at elevated temperatures on the crystal length. It is interpreted that the surface lifetime is strongly affected by the grown-in defects which depend on the thermal history, or the crystal length of the silicon crystals.
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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SHIMURA Fumio
Department of Food & Nutrition, Jumonji University
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Shimura Fumio
Department Of Materials Science And Engineering North Carolina State University
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Daio H
Showa Denko K.k. Saitama Jpn
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Daio Hiroshi
Department Of Materials Science And Engineering North Carolina State University
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BUCZKOWSKI Andrzej
Department of Materials Science and Engineering, North Carolina State University
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Buczkowski Andrzej
Department Of Materials Science And Engineering North Carolina State University
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