Mechanism of Ultraviolet Irradiation Effect on Si-SiO_2 Interface in Silicon Wafers

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概要

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• The effect of ultraviolet (UV) irradiation on the effective minority-carrier recombination lifetime (τ_<eff>) in silicon wafers was studied by a noncontact laser/microwave photoconductance (LM-PC) technique. The τ_<eff> greatly increased in samples with native oxide after the irradiation, which can be attributed to an increase in the surface recombination lifetime (τ_s) due to the change in the surface carrier recombination velocity (S). The dominant factor for the τ_s change can be negative charges created by the photo-induced electrons in the surface area. The band bending near the Si-SiO_2 interface, which is caused by the electric field generated by negative charges, plays a dominant role in changing S.

• 社団法人応用物理学会の論文
• 1992-08-01

著者

• SHIMURA Fumio

  Department of Food & Nutrition, Jumonji University

• Katayama Ken-ichi

  Department Of Materials Science And Engineering North Carolina State University

• Katayama Ken-ichi

  Department Of Materials Science And Engineering North Carolina State University:(present Address) Sh

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