Noncontact Characterization for Carrier Recombination Center Related to Si-SiO_2 Interface

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概要

• 論文の詳細を見る

• The energy levels of carrier recombination centers originating from an Si-SiO_2 interface were investigated for the first time by means of a noncontact and nondestructive laser/microwave photoconductance technique. An energy level of the carrier recombination center around 0.2 eV which can be attributed to a trivalent silicon defect, i.e., the P_<b0> center, was obtained from the temperature dependence of the Shockley-Read-Hall lifetime for (100) silicon wafers with native or thermal oxide.

• 社団法人応用物理学会の論文
• 1993-03-15

著者

• SHIMURA Fumio

  Department of Food & Nutrition, Jumonji University

• Katayama Ken-ichi

  Department Of Materials Science And Engineering North Carolina State University

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