Study of Photo-Induced Effect in Obliquely-Deposited Amorphous Ge-Se Films by XPS
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概要
- 論文の詳細を見る
Amorphous GeSe, GeSe_2 and GeSe_3 films were investigated by XPS. Binding energies and chemical shifts of the 3d and 3p electrons of the constituent elements were measured. It was found that obliquely-deposited GeSe_3 films contain four(Ge)-two(Se) fold and three(Ge)-three(Se) fold bondings, while normally-deposited films have the former type bonding alone. Photo-induced chemical shifts of obliquely-deposited GeSe_3 films are attributable to a transformation from the four(Ge)-two(Se) fold bonds to the three(Ge)-three(Se) bonds. The mechanism of thephoto-induced effect is described.
- 社団法人応用物理学会の論文
- 1980-09-05
著者
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Odajima Akira
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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UENO Tokihiro
Department of Applied Physics, Faculty of Engineering, Hokkaido University
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Ueno Tokihiro
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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Odajima Akira
Department Of Applied Phusics Faculty Of Engineering Hokkaido University
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