DC Tunneling Spectroscopy to Determine the Distribution of Interface States
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概要
- 論文の詳細を見る
A method to determine the interface state distribution in an MOS structure with degenerate p-type semiconductor from the dc tunneling current is proposed and applied to metal/SiO_2/p^<++>-Si structure. The main feature of the present method is the use of the theory of tunneling developed by Freeman and Dahlke with some modification. The (Au/Ti)/SiO_2/p^<++>-Si was prepared by thermal oxidation in wet O_2 at 800℃. It has been found that σ_tN_<ss> (σ_t is the tunneling capture cross-section and N_<ss> the density of states per unit energy and unit area) varies concavely against the energy over the whole band gap of p^<++>-Si and the interface state distribution obtained by the present method is consistent with that obtained for an MOS structure with thick SiO_2 film provided σ_t is independent of energy. These features are found for both annealed and unannealed samples.
- 社団法人応用物理学会の論文
- 1980-05-05
著者
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TAKASE Yoshihiko
Department of Applied Physics, Faculty of Engineering, Hokkaido University
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Odajima Akira
Department Of Applied Phusics Faculty Of Engineering Hokkaido University
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Takase Yoshihiko
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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