Photo-Induced Stress Relaxation in Amorphous Selenium Films
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概要
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Photo-induced stress relaxation was measured in amorphous selenium (a-Se) films with an a-Se/mica bimetallic structure. Thermally-induced stresses in these a-Se films were rapidly relaxed by illumination at temperatures from -50℃ to room temperature. The photo-induced stress relaxation was approximated by an exponential decay at various levels of light intensity, and the activation energy of the photo-induced stress relaxation is estimated to be of the order of 0.1 eV. This can be explained in terms of the structural relaxation in local atomic rearrangements caused by illumination.
- 社団法人応用物理学会の論文
- 1982-03-05
著者
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Odajima Akira
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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Koseki Hideo
Department Of Applied Physics Faculty Of Engineering Hokkaido University:(present Address) Wireless
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Koseki Hideo
Department Of Applied Physics Faculty Of Engineering Hokkaido University
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Odajima Akira
Department Of Applied Phusics Faculty Of Engineering Hokkaido University
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