Chemical Shifts of Photoelectron and Auger Lines in Ag- or Cu-Doped Amorphous GeSe_2 and As_2Se_3
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Chemical shifts of the Ag 3d_<5/2,3/2,> Cu 2p_<3/2,2/1>, Ge 3d, 3p_<3/2,2/1>, As 3d, 3p_<3/2,2/1>, and Se 3d, 3p_<3/2,2/1>, photoelectron lines, and the AgM_<4,5>N_<45>N_<45>, GeL_<3>M_<45>M_<45> and CuL_<3>M_<45>M_<45> Auger lines are measured for Ag and Cu films, and amorphousfilms of Ge, As, Se, GeSe_2, As_2Se_3, Ag-doped GeSe_2, Ag-doped As_2Se_3 and Cu-doped As_2Se_3. The chemical shifts of Ge, Ag and Cu photoelectron lines are corrected for by an extra-atomic relaxation energy obtained from the chemical shifts of Ge, Ag and Cu Auger lines. These results are explained for in view of the electronegativity scales. The chemical shifts in Ag-doped GeSe_2 are treated in accordance with the valence shell potential model; Ag-Se and Ge-Se bonds are attributed to covalent bonds rather than ionic bonds in terms of the amounts of ionic character and the electronegativity differences.
- 社団法人応用物理学会の論文
- 1983-10-20
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