X-Ray Photoelectron and Anger Electron Spectroscopic Studies of Chemical Shifts in Amorphous Ge-Se System
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The chemical shifts of the Ge 3d, 3p_<3/2,1/2> and Se 3d, 3p_<3/2,1/2> photoelectron lines were measured for the amorphous Ge-Se system and those of the Go photoelectron lines are corrected for Auger parameter shifts. According to the valence shell potential model, the ratio of the chemical shift in the amorphous Ge-Se system to that in stoichiometric GeSe_2 can be approximated by the ratio of the Ge-Se bond number in the Ge-Se system to that in GeSe_2. The chemical shift ratios evaluated from the experimental results reveal bond structures at non-stoichiometric compositions. In the excess-Ge range, GeSe is composed of atomic clusters of three-fold co-ordinated Ge and Se atoms, and Ge_2Se_3 contains atomic clusters of Se_3Ge-GeSe_3 units. In the excess-Se range, GeSe_3 includes GeSe_4 tetrahedral units, and Se-Se chains and/or Se_8 rings.
- 社団法人応用物理学会の論文
- 1983-09-20
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