Effects of the Al_2O_3 Film on the Electrical Characteristics of the Planar p-n Junctions

概要

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The gate voltage dependence of the junction breakdown voltage is studied by gate controlled junction diodes with MAS and MAOS structures, and is compared with MOS structure, including thermally grown SiO_2 film. The low level junction reverse current-gate voltage characteristics have shown a new component which increases with decreasing gate voltage for a fixed junction voltage. The new component in the junction reverse current shows negative temperature dependence and is assumed to be caused by tunneling of carriers through an extremely narrow depletion layer of p-n junction near the surface. This phenomenon is probably related to the fact that the rate at which the junction breakdown voltage "walks out", is smaller in MAS structure than in MOS structure for a fixed junction reverse current.
社団法人応用物理学会の論文
1973-09-05