An Instability of MAOS Structures
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概要
- 論文の詳細を見る
An instability of metal-aluminum oxide-silicon dioxide-silicon (MAOS) structures is investigated by the capacitance-voltage characteristics. Furthermore, experiments are examined for MAOS structures obtained by annealing in the various ambients, and also compared with metal-aluminum oxide-silicon (MAS) and metal-aluminum oxide-silicon nitride-silicon dioxide-silicon (MANOS) structures. The new instability of a minor shift of the flat band voltage, displayed as a small negative (positive) shift in the flatband voltage under a positive (negative) bias, is observed in MAOS structures, and can be attributed to the polarization effect in Al_xSi_yO_z layer, between silicon dioxide and aluminum oxide films, formed during the deposition of aluminum oxide film onto silicon dioxide film on silicon and during the annealing in oxygen or air.
- 社団法人応用物理学会の論文
- 1972-08-05
著者
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Nakagiri Masaru
Ic Division Nec
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Tsujide Tohru
Ic Division Nippon Electric Co. Ltd.
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IIDA Kiyoto
IC Division, Nippon Electric Co., Ltd.
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Iida Kiyoto
Ic Division Nippon Electric Co. Ltd.
関連論文
- Electrical Characteristics of Metal Al_2O_3-SiO_2-Si (MAOS) Transistors
- An Instability of MAOS Structures
- Effects of the Al_2O_3 Film on the Electrical Characteristics of the Planar p-n Junctions
- Damage Introduced by Second Breakdown in N-Channel MOS Devices
- Surface State Generation in MOS Structure by Applying High Field to the SiO_2 Film
- The Effects of X-Ray Irradiation on MAS Diodes
- Discriminating Analysis of Non-Uniform Charge Distribution from Surface States in MAOS Diodes
- Influence of Al_2O_3 Deposition Temperature on Charge-Storage and Retention in MA(O)S Structures
- The Effect of Electrode on the C-V Hysteresis Behavior of MAS and MAOS Structures
- The Effects of Heat Treatment on the Interface Characteristics in the Si-Al_2O_3 and Si-SiO_2-Al_2O_3 Systems
- Physical and Chemical Properties of Aluminum Oxide Film Deposited by AlCl_3-CO_2-H_2 System
- Partial Charge Accumulation of MAOS Structures