The Effects of Heat Treatment on the Interface Characteristics in the Si-Al_2O_3 and Si-SiO_2-Al_2O_3 Systems

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概要

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• The effects of heat treatment on the Si surface potential in the Si-Al_2O_3 and Si-SiO_2-Al_2O_3 systems are investigated as a function of various annealing conditions. The electrical properties of the Si-Al_2O_3 system are more sensitive to ambient atmosphere than those of Si-SiO_2-Al_2O_3 system, particularly, to the presence of oxygen. As the oxygen heat treatment temperature rises, the surface charge density increases from 1×10^<12> e/cm^2 to 5×10^<13> e/cm^2 and then decreases. The increased surface charge density by oxygen heat treatment decreases to a constant value by additional hydrogen annealing, and this change is reversible in a lower temperature region but it does not show the same tendency at higher temperatures. So the initial increase of surface charge density is due to some kinds of surface states and the decrease at higher temperatures and/or for longer time is due to the formation of new silicon dioxide film between the silicon substrate and the aluminum oxide film by diffusion of oxidizing species through the aluminum oxide film.

• 社団法人応用物理学会の論文
• 1972-03-05

著者

• Iida Kiyoto

  Ic Division Nippon Electric Co. Ltd.

関連論文

• An Instability of MAOS Structures
• Effects of the Al_2O_3 Film on the Electrical Characteristics of the Planar p-n Junctions
• Influence of Al_2O_3 Deposition Temperature on Charge-Storage and Retention in MA(O)S Structures
• The Effect of Electrode on the C-V Hysteresis Behavior of MAS and MAOS Structures
• The Effects of Heat Treatment on the Interface Characteristics in the Si-Al_2O_3 and Si-SiO_2-Al_2O_3 Systems
• Physical and Chemical Properties of Aluminum Oxide Film Deposited by AlCl_3-CO_2-H_2 System
• Partial Charge Accumulation of MAOS Structures

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