Influence of Al_2O_3 Deposition Temperature on Charge-Storage and Retention in MA(O)S Structures

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概要

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• The influence of the deposition temperature of Al_2O_3 on the characteristics of MAS (metal-Al_2O_3-Si) and MAOS (Metal-Al_2-SiO_2-Si) memory devices is investigated. It is found that the films deposited below 700℃ exhibit high conductivity lowering the high frequency capacitance of MAS and MAOS structures below their quasi-equilibrium minimum values in the C-V characteristics when the depleting bias voltage is applied beyond a certain value. In the case of MAOS structures the direction of the flat-band voltage shifts under positive bias changes from positive to negative with increasing SiO_2 thickness. No distinguishable change in the charge storage characteristics is observed among the films deposited at 800, 900 and 950℃. Also it is observed that the faster the charge retention, the lower the deposition temperature for both MAS and MAOS structures.

• 社団法人応用物理学会の論文
• 1972-11-05

著者

• Tsujide Tohru

  Ic Division Nippon Electric Co. Ltd.

• IIDA Kiyoto

  IC Division, Nippon Electric Co., Ltd.

• Iida Kiyoto

  Ic Division Nippon Electric Co. Ltd.

関連論文

• An Instability of MAOS Structures
• Effects of the Al_2O_3 Film on the Electrical Characteristics of the Planar p-n Junctions
• The Effects of X-Ray Irradiation on MAS Diodes
• Influence of Al_2O_3 Deposition Temperature on Charge-Storage and Retention in MA(O)S Structures
• The Effect of Electrode on the C-V Hysteresis Behavior of MAS and MAOS Structures
• The Effects of Heat Treatment on the Interface Characteristics in the Si-Al_2O_3 and Si-SiO_2-Al_2O_3 Systems
• Physical and Chemical Properties of Aluminum Oxide Film Deposited by AlCl_3-CO_2-H_2 System
• Partial Charge Accumulation of MAOS Structures

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