Discriminating Analysis of Non-Uniform Charge Distribution from Surface States in MAOS Diodes
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概要
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An MAOS (metal-aluminum oxide-silicon oxide-silicon) device shows a decrease in channel conductance and the instability of the threshold voltage during BT (bias-temperature) treatments or during writing and erasing operations (positive and negative high voltage applications respectively). The degradations are ascribed mainly to surface states formation at Si-SiO_2 interface and partly to the nonuniform lateral charge distribution within the gate film. The nonuniformity has been estimated by an increase in the minimum capacitance value observed in the gate capacitance-voltage characteristics of an MAOS transistor. A comparison of the experimental data with the calculated values has revealed that the nonuniformity is not dominant in the degradations.
- 社団法人応用物理学会の論文
- 1976-02-05
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関連論文
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