Electrical Characteristics of Metal Al_2O_3-SiO_2-Si (MAOS) Transistors

概要

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The dependence of effective mobility and the threshold voltage of metal-aluminum oxide-silicon oxide-silicon (MAOS) transistors upon the thickness of silicon oxide (SiO_2) and upon the ambient gas of heat treatment was examined. The effective mobility of MAOS transistors, whose gate insulator film consists of a double layer of Al_2O_3 (about 1500Å) and SiO_2 (20〜110Å), is 40〜460 cm^2/V・sec depending upon the thickness of SiO_2 and this value is small compared with 640cm^2/V・sec of MOS structure. However it increases up to 300〜650cm^2/V・sec after the heat treatment in hydrogen at 500℃ for 4 hours. The small effective mobility of as-grown sample is caused by a large number of surface states near the conduction band edge. These surface states are likely related to a kind of acceptor type defects.
社団法人応用物理学会の論文
1972-10-05