Damage Introduced by Second Breakdown in N-Channel MOS Devices

概要

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Failures in an N-channel MOS device as a result of electrical overstress are disctmssed in terms of "second breakdown transition". In the second breakdown state, large power, as much as 500 -5,000 mW, is dissipated in the drain depletion layer. The power dissipation leads either to aluminum migration from the gate electrode to the substrate through the gate oxide or to the degradation of transistor properties. Most of the aluminum migration occurs in a localized area of the substrate surface, where the depletion layer of the drain region extends widely. The second breakdown transition in an V-channel MOS device is attributable to minority carrier injection from the source region to the substrate and to an increase in the impact ionization current in the drain depletion layer. The critical drain voltage of the second breakdown transition depends on the source-substrate bias, the substrate resistivity, the channel length and the gate voltage.
社団法人応用物理学会の論文
1977-07-05