低ノイズ化を実現した新画素構造のHAD型CMOSイメージセンサの開発(<論文特集>イメージセンシング技術)

概要

論文の詳細を見る
We have developed a CMOS active pixel sensor to be used as a key device for capturing image information. A hole accumulated diode (HAD), which is widely used for CCD image sensors incorporated into the sensor reduces the dark current more than does a PN photodiode. The HAD was redesigned to be suitable for CMOS processes, in particular to prevent image lags at low voltage operation and to improve the sensitivity of wavelengths from green to red. The combination of a five-transistor pixel circuit and a correlated double-sampling circuit at the output stage dramatically reduces the fixed-pattern noise. A 1/3-type 330 k-pixel VGA-format CMOS image sensor had low noise adn high sensitivity characteristics.
社団法人映像情報メディア学会の論文
2001-02-20