IVDによる(Al, Ti)N薄膜の低温形成とその特性

概要

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(Al, Ti) N films were grown on silica and silicon substrates by aluminum and titanium vapor deposition and simultaneous nitrogen ion implantation under the conditions of the nitrogen ion energy of 2.0 keV and the atomic transport ratios of (Ti+Al)/N of 0.5〜1.5 and of Ti/(Ti+Al) of 0〜1.0. The crystalline structure of the films depends on the atomic transport ratio of Ti/(Ti+Al). A single phase with Wurtzite or NaCl structure exists at Ti/(Ti+Al) ≤0.17 or ≥0.25,and two phases with Wurtzite and NaCl structures at Ti/(Ti+Al) ≈0.20. The surface morphology of the films is largely affected by titanium content. With an increase of Ti/(Ti+Al), the surface becomes fine. The microhardness of the films was found to have a maximum value in those films with two phases. The chemical bonds of Al-N and Si-N were identified in the interface between a (Al, Ti) N film and a silicon substrate by means of AES analysis. The metallic aluminum was not found in the interface of such films prepared at the atomic transport ratio of (Ti+Al)/N≤1.0.
社団法人溶接学会の論文
1999-11-05