3d金属とシリカの密着界面における化学結合状態のオージェ分析 : 金属-セラミックス界面近傍における化学結合状態の変遷(第二報)

概要

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The valence electronic structure of the Ti/SiO_2 interface was discussed by analyzing their Auger spectra. The change in the intensity ratio of SiO_2-L_<23>V_1D+Si-L_3M_<23>M_<23>/SiO_2-L_<23>V_1V_1 with Ti contents were helpfull to confirm the interfacial Ti-Si bonds under the condition that the electronic dose were kept constant at each analyze-point through the interface. This concept was also applied to annealed interface of Cr/SiO_2 and Cu/SiO_2. M-O or Si-O bonds were detected at the interface. The possibility of the existence of M-Si bonds were suggested from the Auger intensity ratio. The transition elements which exhibit small number of 3d electron, such as III a-VI a metals, tend to lose the metallic property in electronic structure.
社団法人溶接学会の論文
1991-11-05