Removal of Particles on Si Wafers in SC-1 Solution (Special Issue on Quarter Micron Si Device and Process Technologies)
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概要
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We have investigated the relationship between particle removal efficiency and etched depth in SC-1 solution (the mixture composed of ammonium hydroxide, hydrogen peroxide and DI water) for Si wafers. The Si etching rate increases with increasing NH_4OH (ammonium hydroxide) concentration. The particle removal efficiency depends on the etched Si depth, and is independent of NH_4OH concentration. The minimum required Si etching depth to get over 95% particle removal efficiency is 4nm. Particles on the Si wafers exponentially decrease with increasing the etched Si depth. However the particle removal efficiency is not affected by particle size ranging from 0.2 to 0.5 μm. The particle removal mechanism on the Si wafers in SC-1 solution is dominated by the lift-off of particles due to Si undercutting and redeposition of the removed particle.
- 社団法人電子情報通信学会の論文
- 1994-03-25
著者
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Kawahara Hiroyuki
Kyoto Research Lab. Matsushita Electronics Corporation
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Yoneda Kenji
Kyoto Research Lab. Matsushita Electronics Corporation
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TODOKORO Yoshihiro
Kyoto Research Lab., Matsushita Electronics Corp.
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Todokoro Yoshihiro
Kyoto Research Lab. Matsushita Electronics Corporation
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Murozono Izumi
Kyoto Research Lab., Matsushita Electronics Corporation
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Murozono Izumi
Kyoto Research Lab. Matsushita Electronics Corporation
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