ウェッジ状のAl-O絶縁層を有する強磁性トンネル接合の磁気抵抗効果

概要

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Ferromagnetic tunneling junctions of N_<80>Fe_<20>(Py)/Co/Al oxide/Co with wedge-shaped insulators were fabricated.Al oxide films were formed by natural oxidization with various conditions and were cchecke by FT-IR spectroscopy. The peak intensity and the position depending on the Al thickness were explained by using the l-D Einstein model.When the oxiization time as less than 50 h, tunneling magnetoresistance (TMR) was observed at about 13Å of the Al thickness.When the oxiization time became more than 50 h, the thickness shifted to less than 10Å.The reason for this was considered that Co oxide was formed on the surface of the bottom electrode and became a tunneling barrier with increasing oxidization time.On the other hand, the TMR decreased rapidly with increasing Al thickness.To determine the reason for this, AFM images of the Py/Co/Al surface with various oxiization times were measured.The surface roughness of the Al increaded with increasing oxidization time, corresponding to the TMR results.
社団法人日本磁気学会の論文
1998-04-15