NiFe/Co/Al_2O_3/Co/NiFe/FeMn接合のトンネル磁気抵抗効果

概要

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Spin-valve-type ferromagnetic tunneling junctions using contact metal masks were fabricated, and the annealing effect and temperature dependence of the tunneling magnetoresitance (TMR) ratio and saturated resistance (R_s) were investigated.As-prepared NiFe/Co/Al_2O_3/Co/NiFe/FeMn junctions showed a spin-valve-like MR curve at room temperature.The effect of field annealing was investigated for two reasons: to increase the TMR ratio and: to create an orthogonal magnetic orientation in each of the two magnetic layers. The temperature dependence of the TMR ratio and R_s is affected by the annealing. For the anneale junction, the TMR ratio decreases slightly with increasing temperature and decreases rapidly around 418K, because of the disappearance of the exchange bias in the FeMn layer.
社団法人日本磁気学会の論文
1998-04-15