CoFeSiB/SiO_2多層膜を用いた3段LC ・ローパスフィルタ特性 (<特集>センサ)

概要

論文の詳細を見る
Equipment used in the high-frequency band can accomplish thin styling, miniaturization, and being an integrated circuit according to the rise of the frequency band used. Electrical circuit wiring and parts are often close to a generation source of GHz-range frequencied and a high-frequency central processing unit, and are exposed to hith-frequency noise. The purpose of this investigation is to create a monolithic noise suppression device that decreases the frequency noise in the GHz range by means of a soft magnetic thin-film core. A monolithic 3-step LC low-pass filter was constructed from a thin-film helical inductor and a thin-film MIM (metal/insulator/metal) capacitor, and obtained high attenuation characteristics of - 50 dB at 1.25 GHz and band attenuation characteristics with a width of about 1 GHz. Moreover, magnetic loss simulation suggests that effective resistivity of the CoFeSiB/SiO_2 multilayered film used as a film inductor is approximately 500μΩcm.
社団法人日本磁気学会の論文
1997-04-15