反応性スパッタリング法によるε-,η-Mn窒素化合物薄膜の作製とその磁気的・電気的特性(薄膜)

概要

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Polycrystalline thin films with an oriented direction of ε-Mn_4N along the (111) axis and η-Mn_3N_2 along the (113) axis were prepared as a single phase by the RF reactive magnetron sputtering method on glass substrates. It was clarified by XPS spectral analysis that nitrogen atoms in Mn-N compounds act as donor atoms in terms of the electrical/magnetic properties of the films. The ε-Mn_4N film was a single-phase perovskite-type crystal with lattice parameter 0.385 nm, and this film had the properties of ferrimagnetism, with 1.1 μв per unit cell, and of a metallic film, with electrical conductivity of 1.6×10^4 Ω^<-1>m^<-1>. The η-Mn_3N_2 film was face center tetragonal (a = 0.420 nm, c = 0.413 nm) and had the properties of antiferromagnetism, with 1.4 μв per unit cell, and of a semiconductor flm, with electrical conductivity of 4.2×10^3 Ω^<-1>m^<-1>.
社団法人日本磁気学会の論文
2003-04-01