直接シミュレーションモンテカルロ法による半導体成膜形状シミュレーション

概要

論文の詳細を見る
A deposition simulator using the DSMC (direct simulation Monte Carlo) method has been developed to investigate deposition profile characteristics on small trenches in semiconductor manufacturing processes from vacuum to atmospheric pressure conditions. This simulator can be applied to several deposition processes such as sputter deposition, plasma chemical vapor deposition, and atomspheric-or low-pressure chemical vapor deposition. In particular, rarefied gas flow fields with low concentrations of reactive gases are calculated using a modified DSMC method (test particle method). In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of flow field analysis in the equipment. The effects of upstream boundary conditions, molecular collisions, sticking coefficients and surface migration on deposition profiles in the trenches were clarified.
社団法人日本機械学会の論文
1993-11-25