シリコン単結晶のX線残留応力測定法

概要

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An X-ray stress measuring method for a silicon single crystal is proposed. Various stresses σ_a were applied to a silicon single crystal wafer specimen, and the strains of different diffraction planes were measured by X-rays. The variation of peak positions at various ψ angles caused by various applied stresses σ_a was investigated. The measured peak positions were plotted in the sin^2ψ diagram for various applied stresses σ_a. Although the peak positions of different diffraction planes in the sin^2ψ diagram deviated from a straight line determined by the least squares method, the straight lines crossed at a point, and the slope M and intercept N of the straight line varied linearly with the applied stress σ_a. This shows that the peak position and the strain for a fixed ψ angle vary proportionally to the applied stress σ_a. For plane stress state, the residual stress of a silicon single crystal specimen can be determined using the slope M and intercept N.
社団法人日本機械学会の論文
2003-10-25