集束イオンビームによるセラミックス基板上への帯電像の形成

概要

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A focused ion beam(Ga^+-FIB)drawing on a non-conductive ceramic substrate was investigated for the formation of finely electrified images. The electrified images were formed by using a 30 kV of Ga^+-FIB with a drawing pattern equipment. The region irradiated with Ga^+ ions on the substrates showed positive surface potential and the decay rate of the surface potential was less than 10% for 2000s in air. The electrified images were in-situ observed with a scanning electron microscope(SEM)at 2.5 kV. The secondary electron images, namely the voltage contrast images, showed dark contrast. This fact indicates that the dark image corresponds to the positively electrified regions on the substrate. The width of the electrified image was 8 μm. Finely electrified images formed by Ga^+-FIB can be applied to the electrostatics processes.
社団法人日本セラミックス協会の論文
1997-07-01