幾つかのガス雰囲気下におけるc-Siのパルスレーザーアブレーションによる化学的に修飾された発光性Si粒子の作製

概要

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When a 355-nm pulsed laser light was focused on a polished surface of single crystal silicon (100) in an atmosphere of N_2 gas, some visible photoluminescent silicon nanocrystallites deposited at the bottom and in the vicinity of a hole produced by intense laser ablation. The emission band of these Si-particles, when excited with an Ar ion laser (λ = 514 nm), had a maximum intensity at 590 nm (2.1 eV)-680 nm (1.8 eV) varying systematically in submillimeter units of their distance from the hole. Similar irradiation was carried out under two other gas atmospheres (Ar and O_2) and in vacuo (< 1.33 × 10^<-4> Pa) and the photoluminescent character of the deposite compounds were examined by microprobe photoluminescence spectroscopy. The luminescent characters (band shape and/or band peak position) were found to depend also on these gas atmospheric conditions.
社団法人日本セラミックス協会の論文
2004-10-01