液相焼結窒化ケイ素の等温粒成長

概要

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Grain-growth data, collected after isothermal treatment of four Si_3N_4 materials, which contained different metal oxides as densification agents, are revisited. Diffusion-controlled Ostwald ripening mechanism is generally recognized to be mainly responsible for grain coarsening upon post-densification anneal. Emphasis is placed on rationalizing the grain-growth rate in terms of viscosity of the residual intergranular glass. A simple phenomenological equation is given that allows to predict the size of the Si_3N_4 grains upon annealing process. The pre-exponential coefficient and the exponent of the equation were determined using both grain-growth and intergranular viscosity data of a model Si_3N_4 system, which contained only pure SiO_2 glass at grain boundaries. This general formulation allows to estimate the effective glass viscosity of Si_3N_4-based materials.
社団法人日本セラミックス協会の論文
1997-08-01