Trapped Electron Centers and Trapped Hole Centers in Heavily Doped KCl:Tl. I. Thermal Glow Study
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概要
- 論文の詳細を見る
Thermal glow curves of KCI crystals containi?tg 0.2 -4.2 mole '% of TICI aremeasured after X-ray irradiation at 77 K. Trapjced electron and trapped holecenters such as Tl', Tl", Tl ; , (Tl ; )' and TIE" centers are found to be concernedin the thermal glow phenomena. The features of 1.he glow cttrves change remark-ably with TICI concentratiort because of mark<cd reducticcn in the activationenergies of the trapped electrons in a crystal containing more than 0.4 mole %of TICI. This suggests that the bottom of the conduction band is disturbed by theinfluence of impurity potential. The omission spectrum of the glow also changeswith TICI concentration. A new emission band comes out around 500 nm andbecomes dominant above l motel. It is considered that {rapped hole centerswith complex structures take part in the electron-hole recoxnbination process insuch a heavily doped crystal.
- 社団法人日本物理学会の論文
- 1979-06-15
著者
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Onaka Ryumyo
Institute Of Applied Physics University Of Tsukuba
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Onaka Ryumyo
Institute For Optical Research Kupiku University
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TOYOTOMI Yasuko
Institute of Applied Physics,University of Tsukuba
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Toyotomi Yasuko
Institute Of Applied Physics University Of Tsukuba
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Toyotomi Yasuko
Institute For Optical Research Kyoiku University
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Onaka Ryumyo
Instirure For Optical Research Kyoiku University
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