Electronic Band Structures of Ce_3Pt_3Sb_4 and Ce_3Pt_3Bi_4
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概要
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One-electron energy band structures for Ce_3Pt_3X_4 (X=Sb and Bi), which belong to the valence fluctuation regime with an energy gap, are calculated by a self-consistent LAPW method with the local density approximation. The valence bands consist of the X p and the Pt 5d states and the conduction bands are derived from the Ce 5d states. With depressing the valence bands, the empty Ce 4f bands are located between these bands and thus a narrow band gap appears at the Fermi level. This result explains reasonably the semiconductor-like property of these compounds.
- 社団法人日本物理学会の論文
- 1993-06-15
著者
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Hidaka Hiroyuki
Graduate School Of Natural Science And Technology Okayama University
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TANAKA Kenya
Graduate School of Science, Tokyo Metropolitan University
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Tanaka Kenya
Graduate School Of Science Tokyo Metropolitan University
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HARIMA Hisatomo
College of Integrated Arts and Sciences,Osaka Prefecture University
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KANETA Yasunori
Department of Quantum, Engineering and Systems Science, The University of Tokyo
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Harada H
Department Of Material Physics Faculty Of Engineering Science Osaka University
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Takegahara K
Hirosaki Univ. Aomori Jpn
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Takegahara Katsuhiko
Education Center For Information Processing Tohoku University
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Harima H
Department Of Physics Graduate School Of Science Kobe University
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Kaneta Yasunori
Department Of Physics Tohoku University
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YANASE Akira
The Institute of Scientific and Industrial Research, Osaka University
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Harima Hisatomo
College Of Integrated Arts And Science University Of Osaka Prefecture
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Yanase A
The Institute Of Scientific And Industrial Research Osake University
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Yanase Akira
College Of Integrated Arts And Science University Of Osaka Prefecture
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