Simulation of Domain Growth in a System with Random Impurities
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概要
- 論文の詳細を見る
Domain growth in a system with random impurities for both conserved and nonconserved order parameter is investigated by means of the cell-dynamical system (CDS) method. We find the following. (i) The characteristic length in domain growth obeys l(t)〜(log t)^α where α is smaller than the value predicted by Huse and Henley [Phys. Rev. Lett. 55(1985) 2708]. (ii) The exponent α seems to depend on the impurity concentration and temperature. (iii) Dynamical scaling of the structure factor is satisfied and the form of the scaling function depends on the impurity concentration.
- 社団法人日本物理学会の論文
- 1993-05-15
著者
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HAYAKAWA Hisao
Department of Electronics Engineering, Nagoya University
-
早川 尚男
京都大学大学院人間・環境学研究科
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Iwai T
Tohoku Univ. Sendai
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Iwai Toshiya
Department Of Physics Tohoku University
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Iwai Toshiya
Department Of Applied Physics Graduate School Of Engineering
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