電子顕微鏡用イメージングプレートの特性評価と形態評価研究への応用

概要

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Characteristics of the 25μm-pixel Imaging Plate (IP) for TEM, i.e., the relation between the number of incident electrons and image signal, the signal to noise ratio (S/N) and the detective quantum efficiency (DQE), were measured to apply the 25μm-pixel IP appropriately to atomic scale morphology analysis by means of HVEM. The 25μm-pixel IP had good linearity in the exposure region more than 1×(10)^2 electrons/pixel, but did not have good linearity in the exposure region smaller than 1×10 electrons/pixel at 600kV and 1×(10)^2 electrons/pixel at 1250kV. The S/N increased with increasing the number of incident electrons, but tended to saturate in high exposure region, although the good linearity between the number of incident electrons and image signal was reserved in the region. The DQE had the maximum values of about 50% and about 12% for accelerating voltages of 600 and 1250kV, respectively. Taking account of the S/N ratio and the DQE, the high quality structure image of α-AlB_<12> was observed with the 25μm-pixel IP at an accelerating voltage of 1250kV.Imaging PlateTEMHVEMSNDQEatomic scale morphology analysis
東北大学の論文
1997-03-28