Crystal Structures and Spin Injection Signals of Si/Mg/MgO/Co₂FeAl₀.₅Si₀.₅ Junctions
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概要
- 論文の詳細を見る
We investigated the crystal structures and the spin injection signals of Si/Mg/MgO/Co2FeAl0.5Si0.5 (CFAS) junctions deposited by molecule beam epitaxy. The (001)-orientation and the structural ordering of CFAS thin films changed by heating deposition of CFAS and the insertion of Mg layer into Si/MgO interface. Spin injection signals observed at 10 K for the junctions by 3 terminals Hanle measurements. The maximum voltage change, ΔVMAX, was increased by heating deposition of CFAS and the insertion of Mg layer. It is supposed that the enhancement of spin polarization by the improvement of structural ordering of CFAS or coherent tunneling by (001)-oriented MgO barrier caused the increment of ΔVMAX.
- The Japan Institute of Metals and Materialsの論文
- 2013-08-01
著者
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SUGIMOTO Satoshi
Department of Materials Science, Graduate School of Engineering, Tohoku UNiversity
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Tezuka Nobuki
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Onodera Takashi
Department Of Molecular Immunology Faculty Of Agriculture The University Of Tokyo
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Sugimoto Satoshi
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Matsuura Masashi
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Saito Yoshiaki
Advanced Research Lab Toshiba Corp.
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Yoshida Masahiro
Department Of Applied Bioorganic Chemistry Gifu University
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