Two Different Types of Antiferromagnetic Couplings and Magnetoresistances in Fe/Si Multilayers
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概要
- 論文の詳細を見る
Two different types of antiferromagnetic (AF) interlayer couplings as a function of Si layer thickness, t_<Si>, have been observed in a series of (2.6 nm Fe/t_<Si> nm Si)_<22> multilayers. One of the AF-couplings was observed at around t_<Si>=1.2 nm at room temperature (RT) and changed to ferromagnetic (F) coupling at a low temperature. The other AF coupling was observed for t_<Si> thicker than 1.5 nm with a minimum around t_<Si>=2.5 nm, and was almost temperature independent. Negative magnetoresistance has been observed in the multilayers with the AF coupling, and has similar temperature dependence as that of the AF coupling.
- 社団法人応用物理学会の論文
- 1994-12-01
著者
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Inomata K
Toshiba Corp. Kawasaki Jpn
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Inomata Koichiro
Advanced Research Laboratory Toshiba Corporation
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YUSU Keiichiro
Toshiba Corporation, Materials and Devices Laboratory
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Yusu K
Toshiba Corp. Kanagawa Jpn
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Inomata K
The Department Of Materials Science Graduate School Of Engineering Tohoku University
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SAITO Yoshiaki
Advanced Research Laboratory, Toshiba Corp.
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YUSU Keiichiro
Advanced Research Lab., Research and Development Center, Toshiba Corporation
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Saito Yoshiaki
Advanced Research Lab Toshiba Corp.
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Inomata Koichiro
Advanced Research Lab Toshiba Corp.
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